ã Diodes Incorporated. 1N SCHOTTKY BARRIER SWITCHING DIODE. Features. ·. Low Forward Voltage Drop. ·. Guard Ring Construction for Transient. 1N and 1N Vishay Semiconductors formerly General Semiconductor. Document Number 8-May 1. Schottky Diodes. 1N datasheet, 1N pdf, 1N data sheet, datasheet, data sheet, pdf, BKC International Electronics, 60 V, mW silicon schottky barrier diode.

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Limited Engineering samples available Preview: Communications Equipment, Computers and Peripherals.

(PDF) 1N6263 Datasheet download

Getting started with eDesignSuite. Support Center Video Center. Product is in volume production Evaluation: General terms and conditions. ST Code of Conduct Blog. Support Center Complete list and gateway to support services and resource pools. Please contact our sales support for information on specific devices. No commitment taken to design or produce NRND: The low forward voltage drop and fast switching make it ideal for protection o. Product is in volume production.

No availability reported, please contact our Sales office. The low forward voltage drop and fast switching make it ideal for protection of MO. Computers and Peripherals Data 1n6236. Product is in volume production only to support datashete ongoing production. Selectors Simulators and Models. Getting started with eDesignSuite 5: Tools and Software Development Tools. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling.

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No commitment taken to produce Proposal: Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.

Product is in design stage Target: Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring.

Product is in design feasibility stage. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, b.

Tj max limit of Schottky diodes. Not Recommended for New Design. Media Subscription Media Contacts. For general purpose applications. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling. Marketing proposal datasheef customer feedback. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi.

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Distributor Name Region Stock Datasheeg. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. Who We Are Management. Free Sample Add to cart. Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring.

1N – 60 V, 15 mA axial RF and Ultrafast Switching Signal Schottky Diode – STMicroelectronics

Menu Products Explore our product portfolio. For general purpose applications 2. The low forward voltage drop and fast dxtasheet make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and. IoT for Smart Things.

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