BUKB Transistor Datasheet, BUKB Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. BUK datasheet, BUK circuit, BUK data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for Electronic. Buy Transistor, MOSFET, BUKA BUKA. Browse our latest miscellaneous Technical Reference. BUKA/B Power MOSFET Data Sheet.

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Exposure to limiting values for extended periods may affect device reliability. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification.

UNIT – – 1. Reproduction in whole or in part is prohibited without the prior written consent of huk456 copyright owner. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Philips customers bk456 or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use darasheet sale.

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BUKB NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics

Observe the general handling precautions for electrostatic-discharge datasheeet devices ESDs to prevent damage to MOS gate oxide. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Normalised drain-source on-state resistance. TOAB; pin 2 connected to mounting base. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. April 6 Rev 1. Application information Where application information is given, it is advisory and does not form part of the specification.

Normalised continuous drain current. Exposure to limiting values for extended periods may affect device reliability.

April 7 Rev 1. UNIT – – 1.

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No liability will datasbeet accepted by the publisher for any consequence of its use. Stress above one or more of the limiting values may cause permanent damage to the device. Typical reverse diode current. Typical reverse diode current. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Typical turn-on gate-charge characteristics. Typical turn-on gate-charge characteristics. Normalised drain-source on-state resistance. Typical datahseet, Ciss, Coss, Crss.

BUKB MOSFET Datasheet pdf – Equivalent. Cross Reference Search

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. May 7 Rev 1. May 6 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

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The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Stress above one or more of the limiting values may cause permanent damage to the device. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Refer to mounting instructions for TO envelopes.

Typical capacitances, Ciss, Coss, Crss. Normalised continuous drain current. Product specification This data sheet contains final product specifications.

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